2SD1766 / 2sd1758 / 2sd1862 transistors medium power transistor (32v, 2a) 2SD1766 / 2sd1758 / 2sd1862 ! ! ! ! features 1) low v ce(sat) . v ce(sat) = 0.5v (typ.) (i c /i b = 2a / 0.2a) 2) complements the 2sb1188 / 2sb1182 / 2sb1240 ! ! ! ! structure epitaxial planar type npn silicon transistor ! ! ! ! external dimensions (units : mm) ? 0.1 + 0.2 ? 0.05 + 0.1 ? 0.1 + 0.2 + 0.2 ? 0.1 (3) (2) (1) 4.0 0.3 1.0 0.2 0.5 0.1 2.5 3.0 0.2 1.5 0.1 1.5 0.1 0.4 0.1 0.5 0.1 0.4 0.1 0.4 1.5 4.5 1.6 0.1 ? 0.1 + 0.2 ? 0.1 + 0.2 + 0.3 ? 0.1 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 1.0 0.2 0.55 0.1 9.5 0.5 5.5 1.5 0.3 2.5 1.5 2.3 0.5 0.1 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 1.0 6.8 0.2 2.5 0.2 1.05 0.45 0.1 2.54 2.54 0.5 0.1 0.9 4.4 0.2 14.5 0.5 (1) (2) (3) 0.65max. (1) emitter (2) collector (3) base rohm : atv (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 (1) base (2) collector (3) emitter rohm : mpt3 eiaj : sc-62 2SD1766 2sd1758 2sd1862 abbreviated symbol : db ? ? denotes h fe ! ! ! ! absolute maximum ratings (ta=25 c) 2SD1766 2sd1758 2sd1862 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 1 single pulse, p w =20ms ? 2 when mounted on a 40 40 0.7 mm ceramic board. ? 3 printed circuit board: 1.7 mm thick, collector copper plating 1 cm 2 or lager. parameter symbol limits unit v cbo 40 v v ceo 32 v v ebo 5v i c 2 a (dc) 2.5 a (pulse) ? 1 tj 150 c tstg ? 55~ + 150 c p c 0.5 1 ? 3 w 2 ? 2 10 w (t c = 25 c) w
2SD1766 / 2sd1758 / 2sd1862 transistors ! ! ! ! electrical characteristics (ta=25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t cob min. 40 32 5 ? ? ? 82 ? ? ? ? ? ? ? ? ? 0.5 100 30 ? ? ? 1 1 0.8 390 390 ? ? vi c = 50 a i c = 1ma i e = 50 a v cb = 20v v eb = 4v i c /i b = 2a/0.2a ? v ce = 5v, i e =? 50ma, f = 100mhz ? v ce = 3v, i c = 0.5a ? v cb = 10v, i e = 0a, f = 1mhz v v a a v ? mhz pf typ. max. unit conditions 120 2sd1862 2SD1766,2sd1758 collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance ? measured using pulse current. ! ! ! ! packaging specifications and h fe 2SD1766 type t100 1000 h fe tl 2500 ? tv2 2500 ? ? 2sd1758 ? ? 2sd1862 ? pqr pqr qr package taping code basic ordering unit (pieces) h fe values are classified as follows : item h fe r 180~390 q 120~270 p 82~180 ! ! ! ! electrical characteristic curves collector current : i c (ma) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics 0 2.0 1000 2000 1 200 500 100 20 50 10 2 5 0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6 1.8 ta = 25 c v ce = 3v collector current : i c (a) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.4 0.8 1.2 1.6 2.0 0 ta = 25 c i b = 0a 3.0ma 2.7ma 2.4ma 2.1ma 1.8ma 1.5ma 1.2ma 0.9ma 0.6ma 0.3ma dc current gain : h fe collector current : i c (ma) fig.3 dc current gain vs. collector current 5 500 10 20 50 100 200 500 1a 2a 200 100 50 20 ta = 25 c v ce = 3v 1v
2SD1766 / 2sd1758 / 2sd1862 transistors collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.4 collector-emitter saturation voltage vs. collector current 500 20 200 100 50 5 10 20 50 100 200 500 1a 2a ta = 25 c 10 20 i c /i b = 50 base saturation voltage : v be(sat) (v) collector current : i c (ma) fig.5 collector-emitter saturation voltage vs. collector current 5 1 2 0.2 0.5 0.1 10 20 50 100 200 500 1a 2a ta = 25 c i c /i b = 10 emitter current : i e (ma) transition frequency : f t (mhz) fig.6 transition frequency vs. emitter current - 2 ? 1 200 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 1a 500 1000 100 50 20 ta = 25 c v ce = 5v 0.5 200 10 500 1000 100 20 50 12 51020 ta = 25 c f = 1mhz i e = 0a i c = 0a collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage cib cob collector current : i c (a) collector to emitter voltage : v ce (v) fig.8 safe operating area 0.01 5 0.1 50 2 0.2 0.5 1 0.1 0.02 0.05 0.2 0.5 1 2 5 10 20 (2SD1766) p w = 10ms ? 100ms ? dc t a = 25 c ? single nonrepetitive pulse collector current : i c (a) collector to emitter voltage : v ce (v) fig.9 safe operating area 5 0.1 50 2 0.2 0.5 1 0.1 0.05 0.2 0.5 1 2 5 10 20 0.01 0.02 (2sd1758) p w =100ms ? t c = 25 c ? single nonrepetitive pulse ic max dc ic max pulse ta = 25 c single nonrepetitive pulse p w = 10ms p w = 100ms 0.2 0.5 1 2 5 10 20 50 3 2 1 0.1 0.2 0.5 0.05 collector to emitter voltage : v ce (v) collector current : i c (a) fig.10 safe operating area (2sd1862)
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